an itw company from deep uv to mid-ir revision july 13 , 2018 page 1 of 4 high - temperature gaalas ir emitters od - 850fht features high optical output 850 nm peak emission hermetically sealed to - 46 package narrow angle for long distance applications extended operating temperature range no internal coatings no derating or heat sink required to 80 c electro - optical characteristics at 25 c parameters test conditions min typ max units total power output, p o i f = 100 ma 17 22 mw peak emission wavelength, p i f = 20 ma 850 nm spectral bandwidth at 50 %, ? i f = 20 ma 40 nm half intensity beam angle, i f = 20 ma 8 deg forward voltage, v f i f = 100 ma 1.6 2 volts reverse breakdown voltage, v r i r = 10 a 5 30 volts rise time i f p = 20 ma 20 nsec fall time i f p = 20 ma 20 nsec absolute maximum ratings at 25 parameters units power dissipation 1 200 mw continuous forward current 100 ma peak forward current (10 s, 200 hz) 2 300 ma reverse voltage 5 volts lead soldering temperature (1/16" from case for 10 sec) 260 c 1 derate per thermal derating curve above 25 c. 2 derate linearly above 25 c thermal parameters parameters units storage and operating temperature range - 65 c to 150 c maximum junction temperature 150 c thermal resistance, r thja 1 400 c/w typical thermal resistance, r thja 2 135 c/w typical 1 heat transfer minimized by measuring in still air with minimum heat conducting through leads . 2 air circulating at a rapid rate to keep case temperature at 25 c.
an itw company from deep uv to mid-ir revision july 13 , 2018 page 2 of 4 high - temperature gaalas ir emitters od - 850fht 25 0 20 40 60 80 100 120 140 160 180 200 50 75 150 100 125 ambient temperature (?) maximum rated thermal derating curve typical degradation curve typical radiation pattern power dissipation (mw) no heat sink infinite heat sink 50 60 70 80 90 100 stress time, (hrs) 10 1 10 2 10 3 10 4 10 5 t case = 25 ? no pre burn-in performed i f = 20 ma i f = 50 ma i f = 100 ma i f = 100 ma (-3) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 20 40 60 80 100 beam angle (deg) relative power output (%) relative power output (%)
an itw company from deep uv to mid-ir revision july 13 , 2018 page 3 of 4 high - temperature gaalas ir emitters od - 850fht typical power output vs temperature typical spectral output typical power output vs forward current 10 100 1 10 100 power output, p o (mw) dc forward current, i f (ma) wavelength, (nm) 0 20 40 60 80 100 750 800 850 900 950 relative power output (%) ambient temperature (?) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 relative power output (%)
an itw company from deep uv to mid-ir revision july 13 , 2018 page 4 of 4 high - temperature gaalas ir emitters od - 850fht package information all surfaces are gold plated. dimensions are nominal values in inc hes unless otherwise specified. ordering information o d - 850 - 010 high - temperature narrow angle to - 46 850 nm emitter shipped in esd bag 1260 calle suerte, camarillo, california 93012 phone: +1 805.499.03 3 5 | fax: +1 805.499.8108 | sales@optodiode.com | www. optodiode.com specifications are subject to change without prior notice.
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